Semiconductor device with shielding structure for reducing crosstalk

摘要

One method involves embedding a die in a molding material; forming a first dielectric layer over the molding material and die; forming a conductive trace over an upper surface of the first dielectric layer facing away from the die; and forming a second dielectric layer over the first dielectric layer and the trace. The method further comprises forming a first trench opening extending through the first dielectric layer or the second dielectric layer, wherein a longitudinal axis of the first trench is parallel to a longitudinal axis of the conductor track and wherein no electrically conductive element is exposed at a bottom of the first trench opening is; and filling the first trench opening with an electrically conductive material to form a first ground trench.