Annealing of film at different temperatures and structures formed thereby

摘要

Here, semiconductor device designs with dielectric features and methods of forming dielectric features will be described. In some examples, the dielectric features are formed via an ALD process followed by an annealing process at different temperatures. The dielectric structural elements may have a high density, a low carbon concentration and a lower k value. The dielectric features formed in accordance with the present disclosure have higher resistance to etch chemicals, plasma damage, and physical bombardment in subsequent processes while maintaining a lower k-value for the target capacitance.