VARYING TEMPERATURE ANNEAL FOR FILM AND STRUCTURES FORMED THEREBY

摘要

A semiconductor device structure having a dielectric feature and a method of forming the dielectric feature are described herein. In some examples, the dielectric features are formed by an ALD process followed by a variable temperature annealing process. The dielectric features can have high density, low carbon concentration and low k value. The dielectric features formed in accordance with the present invention improve resistance to etch chemistry, plasma damage and physical impingement in subsequent processes while maintaining a low k value for target capacity efficiency.