FULLY ORIENTED VIA IN THE FUNDAMENTAL RULES

摘要

The present invention relates to semiconductor structures, and more particularly to fully aligned via structures and fabrication methods. The structure includes: a plurality of least-basic conductive patterns formed in a dielectric material, each comprising a recessed conductive material; at least one conductive structure formed in the dielectric material that is wider than the plurality of minimum-order conductive structures; an etch stop layer over a surface of the dielectric layer with openings to expose the conductive material of the at least one conductive pattern and the recessed conductive material of a selected conductive pattern with the least principle; and an upper conductive material aligned with, and in direct electrical contact with, the openings of the etch stop layer with respect to the at least one conductive structure and the selected conductive structure.