FINN-BASED DIODE STRUCTURES WITH A REALIGNED FEATURE LAYOUT

摘要

Diode structures and methods for fabricating diode structures. First and second gate structures are formed, wherein the second gate structure is arranged parallel to the first gate structure. First and second fins are formed that extend vertically from a top surface of a substrate. The first and second fins are disposed between the first gate structure and the second gate structure. A contact structure is coupled to the first fin and the second fin. The contact structure is arranged laterally between the first gate structure and the second gate structure.