SEMICONDUCTOR SEMICONDUCTOR DEVICES WITH VOLTAGE DETECTION AND PHOTONIC TRANSMISSION AND INTEGRATED PHOTONIC SYSTEM

摘要

Traction-strained germanium is provided which may be sufficiently constrained to provide an almost direct bandgap material or a direct bandgap material. Stress materials constrained by compression or tensile stress in contact with germanium regions induce a uniaxial or biaxial tensile stress in the germanium regions. Stressor materials may include silicon nitride or silicon-germanium. The resulting constrained germanium structure can be used to emit or detect photons, including, for example, for the generation of photons in a resonant cavity to produce a laser.