HIGH-PURITY COPPER-COBALT ALLOY SPUTTERING TARGET

摘要

A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at% of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 µm or less, and a number of precipitates is 500 precipitates/mm 2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.