COMPONENT CONSISTING OF DOPED QUARTZ GLASS FOR USE IN A PLASMA ENHANCED PRODUCTION PROCESS, AND METHOD FOR PRODUCING SAID COMPONENT

摘要

Known component made of doped quartz glass for use in a plasma-assisted manufacturing process; in particular in semiconductor production, contain at least one dopant which is suitable for reacting with fluorine to form a fluoride compound, the fluoride compound having a boiling point that is higher than that of SiF sub 4 /sub. On the basis of this, in order to specify a component made of doped quartz glass which, when used in a plasma-assisted manufacturing process, is characterized by high dry etching resistance and low particle formation, and in particular by uniform etching removal, it is proposed that the doped quartz glass have a microhomogeneity that is defined (a ) by a surface roughness with an R sub a /sub value of less than 20 nm after the surface has been subjected to a dry etching procedure specified in the description, and / or (b) by a dopant distribution with a lateral Concentration profile in which maxima of the dopant concentration have an average distance of less than 30 µm from one another.