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EMITTER STRUCTURES FOR ULTRA-SMALL VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS) AND ARRAYS INCORPORATING THE SAME
EMITTER STRUCTURES FOR ULTRA-SMALL VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS) AND ARRAYS INCORPORATING THE SAME
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机译:超小型垂直腔面发射激光器(VCSEL)的发射结构和包含相同结构的阵列
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摘要
A laser diode includes a semiconductor structure of a lower Bragg reflector layer, an active region, and an upper Bragg reflector layer. The upper Bragg reflector layer includes a lasing aperture having an optical axis oriented perpendicular to a surface of the active region. The active region includes a first material, and the lower Bragg reflector layer includes a second material, where respective lattice structures of the first and second materials are independent of one another. Related laser arrays and methods of fabrication are also discussed.
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