METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING GROUP III NITRIDE SINGLE CRYSTAL LAMINATE

摘要

To provide a method for manufacturing a high quality group III nitride single crystal substrate, capable of reducing a grain region having crystal orientation different from that of a peripheral single crystal region in the group III nitride single crystal substrate having the grain region.SOLUTION: The method for manufacturing a group III nitride single crystal substrate comprises: the first modification step of adding physical action to at least a part of grain region of the group III nitride single crystal substrate having the grain region having crystal orientation different from that of a peripheral single crystal region to change the crystal arrangement of the region; and the second modification step of further changing the crystal arrangement changed by the first modification step. The method for manufacturing a group III nitride single crystal laminate obtained by laminating a group III nitride single crystal layer on the group III nitride single crystal substrate obtained by the method is provided.SELECTED DRAWING: Figure 1