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PRODUCTION METHOD OF SILICON FINE PARTICLE HAVING FINE PROTRUSION, AND SILICON FINE PARTICLE

机译:具有精细突起的硅精细颗粒的生产方法和硅精细颗粒

摘要

To provide means for forming fine protrusions on a surface of a silicon fine particle by use of a simple operation and an inexpensive material.SOLUTION: Silicon fine particles are doped with phosphorus or boron by bringing phosphorus or a compound containing phosphorus or bringing boron or a compound containing boron into contact with silicon fine particles and then heat-treating the particles. After the above step, in the case of doping with phosphorus, a first etching step is performed, in which the silicon fine particles are immersed in a solution containing hydrofluoric acid and a transition metal ion so as to precipitate particles of the transition metal on the surfaces of the silicon fine particles, as well as to etch the surfaces of the silicon fine particles by the hydrofluoric acid, the surfaces where, resulting from the precipitation, a contact portion with the transition metal particles is oxidized, and then the transition metal particles are removed. In the case of doping with boron, the first etching step is performed in the same manner as in the case of doping with phosphorus, and then a second etching step is performed by using hydrofluoric acid and an oxidizing agent.SELECTED DRAWING: Figure 1
机译:提供一种通过简单的操作和廉价的材料在硅细颗粒的表面上形成细小突起的方法。解决方案:通过引入磷或含磷的化合物或引入硼或硅来对硅细颗粒掺杂磷或硼。含硼的化合物与硅微粒接触,然后对其进行热处理。在上述步骤之后,在掺杂磷的情况下,执行第一蚀刻步骤,其中将硅细颗粒浸入包含氢氟酸和过渡金属离子的溶液中,以使过渡金属颗粒沉淀在硅上。硅细颗粒的表面,以及通过氢氟酸蚀刻硅细颗粒的表面,由于沉淀而使与过渡金属颗粒的接触部分被氧化的表面,然后是过渡金属颗粒被删除。在掺杂硼的情况下,第一蚀刻步骤与掺杂磷的情况相同,然后通过使用氢氟酸和氧化剂进行第二蚀刻步骤。图1

著录项

  • 公开/公告号JP2020059631A

    专利类型

  • 公开/公告日2020-04-16

    原文格式PDF

  • 申请/专利权人 TOKYO DENKI UNIV;

    申请/专利号JP20180192860

  • 申请日2018-10-11

  • 分类号C01B33/02;

  • 国家 JP

  • 入库时间 2022-08-21 11:36:49

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