COATING SOLUTION FOR FORMING METAL OXIDE FILM, OXIDE INSULATOR FILM, FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a high-performance field-effect transistor using a high dielectric constant oxide insulator film as a gate insulating layer.;SOLUTION: A field effect transistor includes a source electrode, a drain electrode, a gate electrode, a semiconductor layer, and a gate insulating layer, and the gate insulating layer is an oxide insulator film including at least one element A selected from Zr and Hf and at least one element B selected from Be and Mg.;SELECTED DRAWING: Figure 1;COPYRIGHT: (C)2020,JPO&INPIT