Graphene-containing structures, semiconductor devices, and methods for manufacturing graphene-containing structures

摘要

To provide a graphene-containing structure capable of enlarging graphene, mass-producing, and improving carrier mobility of graphene, a semiconductor device having high carrier mobility using the same, and a method for manufacturing a graphene-containing structure.SOLUTION: The graphene-containing structure includes: a silicon carbide semiconductor layer; a graphene layer on the silicon carbide semiconductor layer; and a first aluminum nitride layer provided between the silicon carbide semiconductor layer and the graphene layer.SELECTED DRAWING: Figure 1