首页>
外国专利>
Improving Defect Control and DC Bias Stability in RF Plasma-Based Substrate Processing Systems Using Reactive Molecular Purge Gases
Improving Defect Control and DC Bias Stability in RF Plasma-Based Substrate Processing Systems Using Reactive Molecular Purge Gases
展开▼
机译:使用反应性分子吹扫气体改善基于RF等离子体的基板处理系统中的缺陷控制和DC偏置稳定性
展开▼
页面导航
摘要
著录项
相似文献
摘要
A substrate processing system comprises an upper electrode and a lower electrode arranged in a processing chamber. A gas delivery system selectively delivers at least one of precursor, one or more deposition carrier gases and a post deposition purge gas. An RF generating system deposits film on the substrate by generating RF plasma in the processing chamber between the upper electrode and the lower electrode by supplying an RF voltage to one of the upper electrode and the lower electrode while the precursor and the one or more deposition carrier gases are delivered by the gas delivery system. A bias generating circuit selectively supplies a DC bias voltage to one of the upper electrode and the lower electrode while the post deposition purge gas is delivered by the gas delivery system. The post deposition purge gas that is delivered by the gas delivery system includes a molecular reactant gas.
展开▼