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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >PROPERTIES OF THIN FILMS OF MAGNETIC MATERIALS PRODUCED FROM DC MAGNETRON SPUTTERING - THE EFFECTS OF SUBSTRATE BIAS AND THE PARTIAL PRESSURE OF REACTIVE GASES
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PROPERTIES OF THIN FILMS OF MAGNETIC MATERIALS PRODUCED FROM DC MAGNETRON SPUTTERING - THE EFFECTS OF SUBSTRATE BIAS AND THE PARTIAL PRESSURE OF REACTIVE GASES

机译:直流磁控溅射制备的磁性材料薄膜的性质-衬底偏压的作用和反应气体的分压。

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The manner in which the coercivity, permeability and resistivity of films of Fe-M-X (M : Ta, Hf, Zr, Nb;X: N, C, Ar;) and Permalloy varied because of particular conditions during DC magnetron sputter deposition has been determined. The effects of reactive gases and substrate bias during the sputtering process were studied and the measured values for H-c, mu and rho were compared with the results from formulae derived from gas impurity pinning and scattering theory. For Fe-M-X films, the coercivity could be modified from 1.2 Oe to 0.4 Oe and the permeability from 3 x 10(3) to 8.5 x 10(3) (1 MHZ) by altering the partial pressure of nitrogen between 2 x 10(-5) Torr and 1 x 10(-4) Torr. The coercivity of Permalloy films could be adjusted from 8 Oe to 0.5 Oe and their permeability altered from 200 to 820 (1MHz) by changing the substrate bias between OV and - 100V. [References: 17]
机译:Fe-MX(M:Ta,Hf,Zr,Nb; X:N,C,Ar;)和坡莫合金膜的矫顽力,磁导率和电阻率因直流磁控溅射沉积过程中的特定条件而变化。决心。研究了溅射过程中反应气体和衬底偏压的影响,并将H-c,mu和rho的测量值与气体杂质钉扎和散射理论得出的公式的结果进行了比较。对于Fe-MX薄膜,可通过将氮气分压在2 x 10(10)之间更改,将矫顽力从1.2 Oe修改为0.4 Oe,将磁导率从3 x 10(3)修改为8.5 x 10(3)(1 MHZ)。 -5)托和1 x 10(-4)托。可以通过在OV到-100V之间改变衬底偏压,将坡莫合金膜的矫顽力从8 Oe调整到0.5 Oe,并将其磁导率从200改变为820(1MHz)。 [参考:17]

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