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Power amplifier protection circuit, power amplifier, and speaker unit

机译:功率放大器保护电路,功率放大器和扬声器单元

摘要

The present invention is provided with: a first protection transistor (Q1), the emitter of which is connected to a first node (1); a first diode (D1) connected between the collector of the first protection transistor (Q1) and an output terminal (OUT); a second protection transistor (Q2), the emitter of which is connected to a second node (2); a second diode (D2) connected between the collector of the second protection transistor (Q2) and the output terminal (OUT); a first resistor (R1) and a thermistor (Th1), which are connected between the first node (1) and the second node (2); and a second resistor (R2) and a third resistor (R3), which are connected between the first node (1) and the collector of the second protection transistor (Q2). A voltage divided by means of the first resistor (R1) and the thermistor (Th1) is applied to the base of the second protection transistor (Q2), and a voltage divided by the second resistor (R2) and the third resistor (R3) is applied to the base of the first protection transistor (Q1).
机译:本发明提供:第一保护晶体管(Q1),其发射极连接到第一节点(1);第一二极管(D1)连接在第一保护晶体管(Q1)的集电极与输出端子(OUT)之间;第二保护晶体管(Q2),其发射极连接到第二节点(2);第二二极管(D2)连接在第二保护晶体管(Q2)的集电极和输出端子(OUT)之间;第一电阻器(R1)和热敏电阻(Th1),其连接在第一节点(1)和第二节点(2)之间;第二电阻器(R2)和第三电阻器(R3)连接在第一节点(1)和第二保护晶体管(Q2)的集电极之间。由第一电阻器(R1)和热敏电阻(Th1)分压的电压施加到第二保护晶体管(Q2)的基极,由第二电阻器(R2)和第三电阻器(R3)分压的电压施加到第一保护晶体管(Q1)的基极。

著录项

  • 公开/公告号JP6648827B2

    专利类型

  • 公开/公告日2020-02-14

    原文格式PDF

  • 申请/专利权人 ヤマハ株式会社;

    申请/专利号JP20180520217

  • 发明设计人 藤田 心一;

    申请日2016-05-30

  • 分类号H03F1/52;H03F3/26;H04R3;

  • 国家 JP

  • 入库时间 2022-08-21 11:33:21

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