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Method for washing semiconductor manufacturing apparatus component, apparatus for washing semiconductor manufacturing apparatus component, and vapor phase growth apparatus

机译:清洗半导体制造设备部件的方法,清洗半导体制造设备部件的设备以及气相生长设备

摘要

A method for washing a semiconductor manufacturing apparatus component, the method comprising: a first process of disposing a semiconductor manufacturing apparatus component, to which a nitride semiconductor adheres, in a component holding portion inside a reaction tank of a washing apparatus; a second process of introducing a halogen-containing gas from a gas introducing pipe into the reaction tank to remove the nitride semiconductor adhered to the semiconductor manufacturing apparatus component; a third process of trapping a reaction product generated by a reaction of the halogen-containing gas and the nitride semiconductor in a trapping unit; and a fourth process of discharging the reaction product trapped by the trapping unit from a gas discharging pipe to outside of the reaction tank.
机译:一种用于清洗半导体制造设备部件的方法,该方法包括:第一步骤,将附着有氮化物半导体的半导体制造设备部件设置在清洗设备的反应槽内的部件保持部中;第二工序是从气体导入管向反应槽内导入含卤素的气体,以除去附着在半导体制造装置部件上的氮化物半导体。在捕获单元中捕获由含卤素的气体和氮化物半导体的反应产生的反应产物的第三过程;第四步骤,将由捕集单元捕集的反应产物从气体排放管排放到反应罐的外部。

著录项

  • 公开/公告号US10741380B2

    专利类型

  • 公开/公告日2020-08-11

    原文格式PDF

  • 申请/专利权人 FURUKAWA CO. LTD.;

    申请/专利号US201816223689

  • 申请日2018-12-18

  • 分类号H01L21/02;C23C16/44;H01L21/67;

  • 国家 US

  • 入库时间 2022-08-21 11:31:34

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