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Fast freeform source and mask co-optimization method

机译:快速自由形式源和蒙版协同优化方法

摘要

The present disclosure relates to lithographic apparatuses and processes, and more particularly to tools for optimizing illumination sources and masks for use in lithographic apparatuses and processes. According to certain aspects, the present disclosure significantly speeds up the convergence of the optimization by allowing direct computation of gradient of the cost function. According to other aspects, the present disclosure allows for simultaneous optimization of both source and mask, thereby significantly speeding the overall convergence. According to still further aspects, the present disclosure allows for free-form optimization, without the constraints required by conventional optimization techniques.
机译:本公开涉及光刻设备和工艺,并且更具体地涉及用于优化用于光刻设备和工艺中的照明源和掩模的工具。根据某些方面,本公开通过允许直接计算成本函数的梯度来显着加速优化的收敛。根据其他方面,本公开允许同时优化源和掩模两者,从而显着加速整体收敛。根据另外的方面,本公开允许自由形式的优化,而没有常规优化技术所需的约束。

著录项

  • 公开/公告号US10592633B2

    专利类型

  • 公开/公告日2020-03-17

    原文格式PDF

  • 申请/专利权人 ASML NETHERLANDS B.V.;

    申请/专利号US201815959123

  • 发明设计人 LUOQI CHEN;JUN YE;YU CAO;

    申请日2018-04-20

  • 分类号G06F17/50;G03F7/20;G03F1;G03F1/36;

  • 国家 US

  • 入库时间 2022-08-21 11:30:31

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