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Methods of forming semiconductor devices using aspect ratio dependent etching effects, and related semiconductor devices
Methods of forming semiconductor devices using aspect ratio dependent etching effects, and related semiconductor devices
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机译:使用与纵横比有关的蚀刻效应形成半导体器件的方法以及相关的半导体器件
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摘要
A method of forming a semiconductor device comprises forming a patterned masking material comprising parallel structures and parallel trenches extending at a first angle from about 30° to about 75° relative to a lateral direction. A mask is provided over the patterned masking material and comprises additional parallel structures and parallel apertures extending at a second, different angle from about 0° to about 90° relative to the lateral direction. The patterned masking material is further patterned using the mask to form a patterned masking structure comprising elongate structures separated by the parallel trenches and additional parallel trenches. Exposed portions of a hard mask material underlying the patterned masking structure are subjected to ARDE to form a patterned hard mask material. Exposed portions of a semiconductive material underlying the patterned hard mask material are removed to form semiconductive pillar structures. Semiconductor devices and electronic systems are also described.
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