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Carbon nanotube ternary SRAM cell with improved stability and low standby power
Carbon nanotube ternary SRAM cell with improved stability and low standby power
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机译:具有改善的稳定性和低待机功耗的碳纳米管三元SRAM单元
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摘要
A carbon nanotube ternary SRAM cell with an improved stability and low standby power comprises a write bit line, a read bit line, a column select bit line, an inverted column select bit line, a write word line, an inverted write word line, a read word line, an inverted read word line, a first P-type CNFET, a second P-type CNFET, a third P-type CNFET, a fourth P-type CNFET, a fifth P-type CNFET, a sixth P-type CNFET, a seventh P-type CNFET, an eighth P-type CNFET, a ninth P-type CNFET, a first N-type CNFET, a second N-type CNFET, a third N-type CNFET, a fourth N-type CNFET, a fifth N-type CNFET, a sixth N-type CNFET, a seventh CNFET, an eighth N-type CNFET and a ninth N-type CNFET. The carbon nanotube ternary SRAM cell has the advantages of being lower in power consumption, capable of solving the half-select problem and the read-disturb problem and high in static noise margin.
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