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X-ray detector substrate based on photodiodes with a radial pin junction structure
X-ray detector substrate based on photodiodes with a radial pin junction structure
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机译:基于具有径向销结结构的光电二极管的X射线检测器基板
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摘要
The present application discloses a photodiode structure including multiple light trapping elements. Each light trapping element includes an N-type silicon layer with a recessed structure therein, an intrinsic silicon layer disposed overlying the N-type silicon layer including a side region and a bottom region inside the recessed structure, and a P-type silicon layer disposed as an inner layer overlying the intrinsic silicon layer inside the recessed structure. A radial PIN junction is formed around a nominal axis of the recessed structure.
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