Double-layer silicon PIN photodiode X-ray detector for a future X-ray timing mission

摘要

A double-layer silicon detector consisting of two 500-mu m-thick silicon PIN photodiodes with independent readouts was mounted in a vacuum chamber and tested with X-ray sources. The detector is sensitive from 1 to 30 keV with an effective area of 6 mm(2). The detector performs best at -35 degrees C with an energy resolution of 220eV (FWHM, full-width at half-maximum) at 5.9 keV, and is able to operate at room temperature, +25 degrees C, with moderate resolution around 760 eV (FWHM). The response of the top layer sensor is highly uniform across the sensitive area. This large-format silicon detector is appropriate for future X-ray timing missions. (c) 2006 Elsevier B.V. All rights reserved.