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Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing
Bottom-up growth of silicon oxide and silicon nitride using sequential deposition-etch-treat processing
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机译:使用顺序沉积-蚀刻-处理工艺自底向上生长氧化硅和氮化硅
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摘要
Methods for gapfill of high aspect ratio features are described. A first film is deposited on the bottom and upper sidewalls of a feature. The first film is etched from the sidewalls of the feature and the first film in the bottom of the feature is treated to form a second film. The deposition, etch and treat processes are repeated to fill the feature.
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