Data writing method for rewritable non-volatile memory modules based on use information, memory storage device and memory control circuit unit

摘要

A data writing method, a memory storage device and a memory control circuit unit are provided. The data writing method includes: writing first data belonging to a first logical sub-unit of a first logical unit and second data belonging to a second logical sub-unit of the first logical unit to a first physical erasing unit and a second physical erasing unit respectively; recording use information corresponding to each logical unit; and executing a data arrangement operation corresponding to the first logical unit based on the use information of the first logical unit to copy the first data and the second data from the first physical erasing unit and the second physical erasing unit to a third physical erasing unit, wherein a logical address range of the second logical sub-unit follows a logical address range of the first logical sub-unit.