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Cointegration of III-V channels and germanium channels for vertical field effect transistors
Cointegration of III-V channels and germanium channels for vertical field effect transistors
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机译:垂直场效应晶体管的III-V通道和锗通道的协整
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摘要
Methods for forming cointegrated III-V and Ge channels for vertical field effect transistors are described. Aspects of the invention include forming a first fin and a second fin on a substrate, wherein the first fin includes a first material including a first semiconductor material at a first concentration level, and wherein the second fin includes a second material including a second semiconductor material at a second concentration. A condensation oxidation is performed to increase the first concentration level to a targeted first final concentration level and increase the second concentration level to a targeted second final concentration level. The second fin is replaced with a third fin including a third material including a combination of a group III element with a group V element.
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