PSEUDO-CRYOGENIC SEMICONDUCTOR DEVICE HAVING PSEUDO-CRYOGENIC TEMPERATURE SENSOR AND VOLTAGE SUPPLIER AND PSEUDO-CRYOGENIC SEMICONDUCTOR STACK

摘要

A pseudo-cryogenic semiconductor device includes memory cells having a plurality of transistors; and a bulk bias voltage supply circuit configured to provide a bulk bias voltage to be applied to a bulk region of the memory cells. The bulk bias voltage supply circuit includes a first temperature sensing circuit configured to generate a first voltage adjustment signal by sensing a temperature in a range from about 70° K to about 173° K; and a bulk bias voltage selector configured to receive the first voltage adjustment signal, select one of a first bulk bias voltage and a second bulk bias voltage different from the first bulk bias voltage, and output the selected voltage as the bulk bias voltage.