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Vertical field effect transistor with top and bottom airgap spacers
Vertical field effect transistor with top and bottom airgap spacers
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机译:带有顶部和底部气隙垫片的垂直场效应晶体管
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摘要
A vertical field effect transistor (VFET) having a bottom airgap spacer located beneath a gate structure and a top airgap spacer located above the gate structure is provided. The top airgap spacer reduces overlap capacitance between the gate structure and a top source/drain structure of the VFET, while the bottom airgap spacer reduces the overlap capacitance and a coupling capacitance that is present between the gate structure and a bottom source/drain structure of the VFET.
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