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Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
Engineered barrier layer interface for high speed spin-transfer torque magnetic random access memory
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机译:工程隔离层接口,用于高速自旋转移力矩磁性随机存取存储器
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摘要
A perpendicular magnetic tunnel junction may include a free layer, a reference layer, and a barrier layer. The barrier layer may be arranged between the free layer and the reference layer. The barrier layer may include a first interface and a second interface. The first interface may face the free layer, and a second interface may face the reference layer. The first interface may not physically correlate with the second interface.
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