首页> 外国专利> Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks

Co-modeling post-lithography critical dimensions and post-etch critical dimensions with multi-task neural networks

机译:使用多任务神经网络对光刻后的关键尺寸和蚀刻后的关键尺寸进行共建模

摘要

A method is presented for constructing a deep neural network based model to concurrently simulate post-lithography critical dimensions (CDs) and post-etch critical dimensions (CDs) and to improve the modeling accuracy of each process respectively. The method includes generating lithographic aerial images of physical design layout patterns, constructing a multi-task neural network including two output channels, training the multi-task neural network with the training data of the lithographic aerial images, and outputting simulated critical dimension values pertaining to lithography and etch processes.
机译:提出了一种用于构建基于深度神经网络的模型的方法,以同时模拟光刻后的关键尺寸(CD)和蚀刻后的关键尺寸(CD)并分别提高每个过程的建模精度。该方法包括:生成具有物理设计布局图案的平版印刷航拍图像;构造包括两个输出通道的多任务神经网络;使用平版印刷航拍图像的训练数据训练多任务神经网络;以及输出与以下内容有关的模拟临界尺寸值:光刻和蚀刻工艺。

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