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Metal chalcogenides for pseudocapacitive applications

机译:用于拟电容应用的金属硫属化物

摘要

A synthetic metal dichalcogenide having a highly defected nanocrystalline layered structure, wherein layer spacing is larger than in perfect crystals of the same material, wherein the defected structure provides access to interlayer crystals of the same material, and wherein the defected structure facilitates a pseudocapacitive charge storage mechanism. The metal dichalcogenide is receptive to intercalation of ions such as Li ions, Na ions, Mg ions, and Ca ions, and does not undergo a phase transition upon intercalation of Li ions, Na ions, Mg ions, or Ca ions. The metal dichalcogenide can be used, for example, as a component of an electrode that also includes a carbon derivative, and a binder, which are intermixed to form the electrode. The resultant composite electrode is highly porous and highly electronically conductive, and is suitable for use in devices such as symmetric capacitors, asymmetric capacitors, rocking chair batteries, and other devices.
机译:具有高度缺陷的纳米晶体层状结构的合成金属二卤化钨,其中层间距大于相同材料的理想晶体中的层间距,其中所述缺陷结构提供了进入相同材料的层间晶体的通道,并且其中所述缺陷结构有助于伪电容电荷存储机制。金属二卤化物易于接受诸如锂离子,钠离子,镁离子和钙离子的离子的嵌入,并且在嵌入锂离子,钠离子,镁离子或钙离子时不经历相变。金属二卤化金属例如可以用作还包含碳衍生物和粘合剂的电极的成分,将它们混合以形成电极。所得的复合电极是高度多孔的和高度导电的,并且适合用于诸如对称电容器,非对称电容器,摇椅电池和其他设备的设备中。

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