REPLACEMENT BOTTOM ELECTRODE STRUCTURE PROCESS TO FORM MISALIGNMENT TOLERATE MRAM WITH HIGH YIELD

摘要

A replacement bottom electrode structure process is provided in which a patterned stack containing a MTJ pillar and a top electrode structure is fabricated and passivated on a sacrificial dielectric material plug that is embedded in a dielectric capping layer. The sacrificial dielectric material plug is then removed and replaced with a bottom electrode structure. The replacement bottom electrode structure process of the present application allows the MTJ patterning to be misalignment tolerate and fully eliminates the potential yield loss from the bottom electrode structure.