Resistive random-access memory array with reduced switching resistance variability
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机译:降低开关电阻可变性的电阻式随机存取存储器阵列
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摘要
Devices and methods are provided to construct resistive random-access (RRAM) array structures which comprise RRAM memory cells, wherein each RRAM memory cell is formed of multiple parallel-connected RRAM devices to reduce the effects of resistive switching variability of the RRAM memory cells.
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