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Apparatus and methods for determining an expected data age of memory cells

机译:用于确定存储单元的预期数据寿命的设备和方法

摘要

Methods of operating a memory including applying an intermediate read voltage to a selected access line for a read operation, adding noise to a sensing operation while applying the intermediate read voltage, determining a value indicative of a number of memory cells of a plurality of memory cells connected to the selected access line that are activated in response to applying the intermediate read voltage to the selected access line, and determining an expected data age of the plurality of memory cells in response to the value indicative of the number of memory cells of the plurality of memory cells that are activated in response to applying the intermediate read voltage to the selected access line.
机译:操作存储器的方法包括:将中间读取电压施加到选定的访问线以进行读取操作;在施加中间读取电压的同时向感测操作添加噪声;确定指示多个存储单元中的存储单元的数量的值响应于向选择的访问线施加中间读取电压而激活的,连接到选择的访问线的信号,并且响应于指示多个存储单元的数量的值来确定多个存储单元的预期数据寿命响应于将中间读取电压施加到所选访问线而被激活的存储单元的数量。

著录项

  • 公开/公告号US10553289B1

    专利类型

  • 公开/公告日2020-02-04

    原文格式PDF

  • 申请/专利权人 MICRON TECHNOLOGY INC.;

    申请/专利号US201816161256

  • 发明设计人 LUCA DE SANTIS;MARCO-DOMENICO TIBURZI;

    申请日2018-10-16

  • 分类号G11C16/26;G11C16/34;G11C11/409;G11C7/06;G11C16/28;G11C11/56;G11C16/04;G11C7/14;G11C29/50;

  • 国家 US

  • 入库时间 2022-08-21 11:24:46

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