Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure
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机译:多次纳秒激光脉冲退火工艺及其所得的半导体结构
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摘要
Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.
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