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机译:功能器件半导体结构的脉冲激光退火
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA;
Currently: Applied Materials, Santa Clara, CA 95054-3299, USA;
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA;
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA;
Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA;
findustrial applications; kinetics of defect formation and annealing; semiconductors; cold working; work hardening; annealing; post-deformation annealing; quenching; tempering recovery; and crystallization; field effect devices;
机译:脉冲激光沉积HfO_(2)/ SiC金属-绝缘体-半导体器件结构的低漏电流传输和高击穿强度
机译:脉冲激光沉积HfO2 sub> / SiC金属-绝缘体-半导体器件结构的低泄漏电流传输和高击穿强度
机译:多层半导体结构中GaAs的脉冲激光退火
机译:无机太阳能电池的新设计概念:从薄膜到功能纳米结构:使用脉冲激光原位生长半导体核-壳纳米结构
机译:硅结构的脉冲激光退火,用于结晶和掺杂剂激活。
机译:宽带可调集成CMOS脉冲发生器最小脉冲宽度为80ps用于增益转换半导体激光器
机译:优化脉冲激光退火以提高半导体异质结构中注入结整流器的清晰度