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UNSUCCESSFUL WRITE RETRY BUFFER

机译:不成功的写重试缓冲区

摘要

A memory module includes at least two memory devices. Each of the memory devices perform verify operations after attempted writes to their respective memory cores. When a write is unsuccessful, each memory device stores information about the unsuccessful write in an internal write retry buffer. The write operations may have only been unsuccessful for one memory device and not any other memory devices on the memory module. When the memory module is instructed, both memory devices on the memory module can retry the unsuccessful memory write operations concurrently. Both devices can retry these write operations concurrently even though the unsuccessful memory write operations were to different addresses.
机译:存储器模块包括至少两个存储器设备。每个存储设备在尝试写入其各自的存储内核后执行验证操作。当写入失败时,每个存储设备都会在内部写入重试缓冲区中存储有关写入失败的信息。对于一个存储设备,而对于存储模块上的任何其他存储设备,写操作可能仅是不成功的。当指示存储模块时,存储模块上的两个存储设备都可以同时重试不成功的存储写操作。即使不成功的内存写操作是针对不同的地址,两个设备也可以同时重试这些写操作。

著录项

  • 公开/公告号US2020334009A1

    专利类型

  • 公开/公告日2020-10-22

    原文格式PDF

  • 申请/专利权人 RAMBUS INC.;

    申请/专利号US202016872681

  • 发明设计人 HONGZHONG ZHENG;BRENT HAUKNESS;

    申请日2020-05-12

  • 分类号G06F5/14;G06F13/16;

  • 国家 US

  • 入库时间 2022-08-21 11:24:42

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