DIRECT FORMATION OF HEXAGONAL BORON NITRIDE ON SILICON BASED DIELECTRICS

摘要

A scalable process for fabricating graphene/hexagonal boron nitride (h-BN) heterostructures is disclosed herein. The process includes (BN)_xH_y-radical interfacing with active sites on silicon nitride coated silicon (Si₃N₄/Si) surfaces for nucleation and growth of large-area, uniform and ultrathin h-BN directly on Si₃N₄/Si substrates (B/N atomic ratio=1:1.11±0.09). Further, monolayer graphene van der Waals bonded with the produced h-BN surface benefits from h-BN's reduced roughness (3.4 times) in comparison to Si₃N₄/Si. Because the reduced surface roughness leads to reduction in surface roughness scattering and charge impurity scattering, therefore an enhanced intrinsic charge carrier mobility (3 folds) for graphene on h-BN/Si₃N₄/Si is found.