SOLAR CELL DESIGN FOR IMPROVED PERFORMANCE AT LOW TEMPERATURE

摘要

A panel including at least one solar cell having a cell comprised of gallium arsenide (GaAs) or indium gallium arsenide (InGaAs) with a back surface field (BSF) comprised of aluminum gallium arsenide (AlGaAs) or indium aluminum gallium arsenide (InAlGaAs) p-type doped for enhanced operation of the solar cell at temperatures less than −50° C. In one example, the back surface field comprises Al_xGa_1-xAs or In_0.01Al_xGa_1-xAs, wherein x is less than about 0.8, for example, 0.2. The back surface field may be p-type doped with zinc (Zn) or carbon (C).