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THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL FILLING AT GATE CUT (CT)
THRESHOLD VOLTAGE ADJUSTMENT FROM OXYGEN VACANCY BY SCAVENGE METAL FILLING AT GATE CUT (CT)
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机译:在门禁处通过扫除金属填充来调整氧气空缺的阈值电压(CT)
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摘要
A method of controlling threshold voltage shift that includes forming a first set of channel semiconductor regions on a first portion of a substrate, and forming a second set of channel semiconductor regions on a second portion of the substrate. A gate structure is formed on the first set of channel semiconductor regions and the second set of channel, wherein the gate structure extends from a first portion of the substrate over an isolation region to a second portion of the substrate. A gate cut region is formed in the gate structure over the isolation region. An oxygen scavenging metal containing layer is formed on sidewalls of the gate cut region.
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