A display panel, a display device and a method for preparing a low-temperature polysilicon thin film transistor are provided. The method includes: providing a base substrate; forming a semiconducting layer on the base substrate; forming a first insulating layer on the semiconducting layer; forming a first metal layer on the first insulating layer and pattering the first metal layer to obtain a first metal gate layer; forming a second insulating layer on the first metal layer; forming a second metal layer on the second insulating layer and patterning the second metal layer to obtain a second metal gate layer; forming a third insulating layer on the second metal layer; forming a third metal layer on the third insulating layer and patterning the third metal layer to form a source and a drain. The LTPS technology can be applied to the production of large-size panels by adopting the present disclosure.
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