SILICON CARBIDE MOSFET WITH SOURCE BALLASTING

摘要

An integrated device and a method for making said integrated device. The integrated device includes a plurality of planar MOSFETs that have a first contact region formed in a first source region of a plurality of source regions and a second contact region formed in a second source region of the plurality of source regions. The first and second contact regions have respective portions of the source region doped with the second conductivity type, and the first and second contact regions are separated by a JFET region, wherein the JFET region is longer in one planar dimension than the other and the first and second contact regions are separated by the longer planar dimension. The JFET region is bounded on at least one side corresponding to the longer planar dimension by a source region and a body region in conductive contact with at least one contact region.