ROOM-TEMPERATURE FERROMAGNETIC SEMICONDUCTOR LAYERS, ELECTRONIC DEVICES INCLUDING THE SAME, AND METHODS OF FORMING THE SAME

摘要

Ferromagnetic semiconductor layers and methods of forming the same are provided. Electronic devices including the ferromagnetic semiconductor layer are also provided. The ferromagnetic semiconductor layer may include an atomically thin transition metal dichalcogenide layer. The atomically thin transition metal dichalcogenide layer may include dopant metal atoms therein.