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STACKABLE SYMMETRICAL OPERATION MEMORY BIT CELL STRUCTURE WITH BIDIRECTIONAL SELECTORS
STACKABLE SYMMETRICAL OPERATION MEMORY BIT CELL STRUCTURE WITH BIDIRECTIONAL SELECTORS
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机译:具有双向选择器的可堆叠对称操作存储器位单元结构
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摘要
A method of forming an electrical device that includes forming an amorphous semiconductor material on a metal surface of a memory device, in which the memory device is vertically stacked atop a first transistor. The amorphous semiconductor material is annealed with a laser anneal having a nanosecond duration to convert the amorphous semiconductor material into a crystalline semiconductor material. A second transistor is formed from the semiconductor material. The second transistor vertically stacked on the memory device.
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