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Transparent Conductive Oxide in Silicon Heterojunction Solar Cells

机译:硅异质结太阳能电池中的透明导电氧化物

摘要

Devices and methods for reducing optical losses in transparent conductive oxides (TCOs) used in silicon heterojunction (SHJ) solar cells while enhancing series resistance are disclosed herein. In particular, the methods include reducing the thickness of TCO layers by about 200% to 300% and depositing hydrogenated dielectric layers on top to form double layers of antireflection coating. It has been discovered that the conductivity of a thin TCO layer can be increased through a hydrogen treatment supplied from the capping dielectric during the post deposition annealing. The optimized cells with ITO/SiOx:H stacks achieved more than 41 mA/cm2 generation current on 120-micron-thick wafers while having approximately 100 Ohm/square sheet resistance. Further, solar cells and methods may include integration of ITO/SiOx:H stacks with Cu plating and use ITO/SiNx/SiOx triple layer antireflection coatings. The experimental data details the improved optics and resistance in cell stacks with varying materials and thicknesses.
机译:本文公开了用于减少硅异质结(SHJ)太阳能电池中使用的透明导电氧化物(TCO)中的光损耗同时增强串联电阻的装置和方法。特别地,该方法包括将TCO层的厚度减小约200%至300%,并且在顶部上沉积氢化的介电层以形成双层抗反射涂层。已经发现,可以通过在沉积后退火期间从封盖电介质提供的氢处理来增加薄的TCO层的电导率。具有ITO / SiO x :H堆叠的优化电池在120微米厚的晶片上实现了超过41 mA / cm 2 的产生电流,同时具有约100 Ohm /平方片抵抗性。此外,太阳能电池和方法可以包括将ITO / SiO x :H堆与Cu镀层集成在一起,并使用ITO / SiN x / SiO x 三层抗反射涂层。实验数据详细介绍了具有不同材料和厚度的电池堆中改进的光学性能和电阻。

著录项

  • 公开/公告号US2019393365A1

    专利类型

  • 公开/公告日2019-12-26

    原文格式PDF

  • 申请/专利权人 STANISLAU HERASIMENKA;

    申请/专利号US201916550988

  • 发明设计人 STANISLAU HERASIMENKA;

    申请日2019-08-26

  • 分类号H01L31/0216;H01L31/20;H01L31/0747;H01L31/0224;

  • 国家 US

  • 入库时间 2022-08-21 11:22:02

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