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REMOTE PLASMA BASED DEPOSITION OF BORON NITRIDE, BORON CARBIDE, AND BORON CARBONITRIDE FILMS
REMOTE PLASMA BASED DEPOSITION OF BORON NITRIDE, BORON CARBIDE, AND BORON CARBONITRIDE FILMS
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机译:基于等离子的氮化硼,碳化硼和碳化硼薄膜沉积
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摘要
A boron nitride, boron carbide, or boron carbonitride film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. A boron-containing precursor is provided to a reaction chamber, where the boron-containing precursors has at least one boron atom bonded to a hydrogen atom. Radical species, such as hydrogen radical species, are provided from a remote plasma source and into the reaction chamber at a substantially low energy state or ground state. A hydrocarbon precursor may be flowed along with the boron-containing precursor, and a nitrogen-containing plasma species may be introduced along with the radical species from the remote plasma source and into the reaction chamber. The boron-containing precursor may interact with the radical species along with one or both of the hydrocarbon precursor and the nitrogen-containing precursor to deposit the boron nitride, boron carbide, or boron carbonitride film.
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