首页> 外国专利> EUV MASK INSPECTION APPARATUS AND METHOD, AND EUV MASK MANUFACTURING METHOD INCLUDING EUV MASK INSPECTION METHOD

EUV MASK INSPECTION APPARATUS AND METHOD, AND EUV MASK MANUFACTURING METHOD INCLUDING EUV MASK INSPECTION METHOD

机译:EUV面具检查装置和方法,以及包括EUV面具检查方法的EUV面具制造方法

摘要

Provided are a method and an apparatus for inspecting an extreme ultraviolet (EUV) mask at a high speed with high optical efficiency, and a method of manufacturing the EUV mask, wherein the method of inspecting the EUV mask is included in the method of manufacturing the EUV mask. The apparatus for inspecting the EUV mask includes a light source configured to generate and output light, a linear zone plate configured to convert the light from the light source to light having a linear form, a slit plate configured to output the light having the linear form by removing a higher-order diffracted light component from the light having the linear form, a stage on which the EUV mask is located, and a detector configured to detect the light reflected from the EUV mask, in response to the light being irradiated onto and reflected from the EUV mask.
机译:提供一种用于以高光学效率高速检查极紫外(EUV)掩模的方法和设备,以及制造EUV掩模的方法,其中,检查EUV掩模的方法包括在制造EUV掩模的方法中。 EUV面罩。用于检查EUV掩模的设备包括:光源,被配置为产生并输出光;线性波带板,其被配置为将来自光源的光转换为具有线性形式的光;狭缝板,其被配置为输出具有线性形式的光。通过从具有线性形式的光中去除高阶衍射光分量,EUV掩模所在的平台以及检测器,该检测器被配置为响应于被照射到和反射的光而检测从EUV掩模反射的光。从EUV遮罩反射。

著录项

  • 公开/公告号US2020003685A1

    专利类型

  • 公开/公告日2020-01-02

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201816235268

  • 发明设计人 BYEONG-HWAN JEON;

    申请日2018-12-28

  • 分类号G01N21/55;

  • 国家 US

  • 入库时间 2022-08-21 11:20:52

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号