首页> 外国专利> NEUROMORPHIC APPARATUS HAVING 3D STACKED SYNAPTIC STRUCTURE AND MEMORY DEVICE HAVING THE SAME

NEUROMORPHIC APPARATUS HAVING 3D STACKED SYNAPTIC STRUCTURE AND MEMORY DEVICE HAVING THE SAME

机译:具有3D叠层突触结构和神经记忆装置的神经形态学装置

摘要

A neuromorphic apparatus includes a three-dimensionally-stacked synaptic structure, and includes a plurality of unit synaptic modules, each of the plurality of unit synaptic modules including a plurality of synaptic layers, each of the plurality of synaptic layers including a plurality of stacked layers, and each of the plurality of unit synaptic modules further including a first decoder interposed between two among the plurality of synaptic layers. The neuromorphic apparatus further includes a second decoder that provides a level selection signal to the first decoder included in one among the plurality of unit synaptic modules to be accessed, and a third decoder that generates an address of one among a plurality of memristers to be accessed in a memrister array of one among the plurality of synaptic layers included in the one among the plurality of unit synaptic modules to be accessed.
机译:神经形态设备包括三维堆叠的突触结构,并且包括多个单位突触模块,所述多个单位突触模块中的每一个均包括多个突触层,所述多个突触层中的每一个均包括多个堆叠层多个单元突触模块中的每一个还包括插入在多个突触层中的两个之间的第一解码器。该神经形态设备还包括:第二解码器,其向包括在要访问的多个单位突触模块之一中的第一解码器提供电平选择信号;以及第三解码器,其生成要访问的多个忆阻器之一的地址。在多个要被访问的单元突触模块之一中包括的多个突触层之一中的忆阻器阵列中。

著录项

  • 公开/公告号US2019354843A1

    专利类型

  • 公开/公告日2019-11-21

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US201916414257

  • 发明设计人 JAECHUL PARK;SANGWOOK KIM;

    申请日2019-05-16

  • 分类号G06N3/063;G11C13;H01L25/065;

  • 国家 US

  • 入库时间 2022-08-21 11:20:37

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