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Method for Forming an Insulation Layer in a Semiconductor Body and Transistor Device
Method for Forming an Insulation Layer in a Semiconductor Body and Transistor Device
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机译:在半导体主体和晶体管器件中形成绝缘层的方法
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摘要
A method and a transistor device are disclosed. The method includes: forming a trench in a first surface in an edge region of a semiconductor body; forming an insulation layer in the trench and on the first surface of the semiconductor body; and planarizing the insulation layer so that a trench insulation layer that fills the trench remains, wherein forming the insulation layer comprises a thermal oxidation process.
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