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Wafer-Level High Aspect Ratio Beam Shaping

机译:晶圆级高纵横比光束整形

摘要

A light-emitting device includes a semiconductor substrate, a surface-emitting semiconductor light source on the semiconductor substrate, a monolithic first dielectric, and a second dielectric. The monolithic first dielectric is transparent to light emitted by the light source and includes first and second micro-lenses adjacent an aperture of the light source and having axes parallel to and offset from an axis of a beam of light emitted by the light source, and a saddle-shaped lens over the aperture of the light source. The saddle-shaped lens connects the first and second micro-lenses and reshapes the beam of light emitted by the light source to have a high aspect ratio. The second dielectric is transparent to light emitted by the light source and encapsulates a light emission surface of the saddle-shaped lens. The second dielectric has a higher refractive index than the monolithic first dielectric.
机译:发光器件包括半导体衬底,在半导体衬底上的表面发射半导体光源,整体式第一电介质和第二电介质。整体式第一电介质对光源发出的光是透明的,并且包括第一和第二微透镜,该第一和第二微透镜与光源的孔相邻,并且具有与光源发出的光束的轴平行并且与之偏离的轴,以及光源孔上方的鞍形透镜。鞍形透镜连接第一微透镜和第二微透镜,并对光源发出的光束进行整形,以具有高的纵横比。第二电介质对于由光源发出的光是透明的,并且包封鞍形透镜的发光表面。第二电介质具有比单片第一电介质更高的折射率。

著录项

  • 公开/公告号US2019369405A1

    专利类型

  • 公开/公告日2019-12-05

    原文格式PDF

  • 申请/专利权人 APPLE INC.;

    申请/专利号US201916399937

  • 申请日2019-04-30

  • 分类号G02B27/09;F21V5;F21V5/04;

  • 国家 US

  • 入库时间 2022-08-21 11:18:46

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