首页> 外国专利> CHIP COUPLING CAPACITOR WITH STANDARD RADIO FREQUENCY SHIELDING STRUCTURE FOR LOWER LOSS

CHIP COUPLING CAPACITOR WITH STANDARD RADIO FREQUENCY SHIELDING STRUCTURE FOR LOWER LOSS

机译:带有标准射频屏蔽结构的芯片耦合电容器,降低了损耗

摘要

a capacitor radio frequency (rf) shielding structure can include a ground plane partially surrounding a coupling capacitor in an rf signal path. the ground plane may include a first portion of the ground plane that extends between a positive terminal of the RF signal path and a negative terminal of the RF signal path. the ground plane may include a second portion of the ground plane that extends between the positive terminal and the negative terminal of the RF signal path. the second portion of the ground plane may be opposite the first portion of the ground plane. The capacitor RF shielding structure may also include a standardized shielding layer that comes into electrical contact with the first portion of the ground plane and / or the second portion of the ground plane. the standardized shield layer can electrically disconnect a return current path over the standardized shield layer to confine a return current to run over the first portion of the ground plane or the second portion of the ground plane.
机译:电容器射频(RF)屏蔽结构可包括接地平面,该接地平面部分地围绕RF信号路径中的耦合电容器。接地平面可以包括在RF信号路径的正端子与RF信号路径的负端子之间延伸的接地平面的第一部分。接地平面可以包括接地平面的第二部分,该第二部分在RF信号路径的正端子和负端子之间延伸。接地平面的第二部分可以与接地平面的第一部分相对。电容器RF屏蔽结构还可包括与接地平面的第一部分和/或接地平面的第二部分电接触的标准化屏蔽层。标准化屏蔽层可以电断开标准化屏蔽层上方的返回电流路径,以限制返回电流流过接地平面的第一部分或接地平面的第二部分。

著录项

  • 公开/公告号BR112019026551A2

    专利类型

  • 公开/公告日2020-06-23

    原文格式PDF

  • 申请/专利权人 QUALCOMM INCORPORATED;

    申请/专利号BR20191126551

  • 发明设计人 HAITAO CHENG;ZHANG JIN;

    申请日2018-06-13

  • 分类号H01L23/522;

  • 国家 BR

  • 入库时间 2022-08-21 11:18:25

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